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DMN2065UW-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N CH 20V 2.8A SOT323. Review the specifications below when checking this part for your BOM.
The DMN2065UW-7 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT323 surface-mount package. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage rating of ±12V. The device exhibits a typical on-resistance (RDS(ON)) of 56mΩ at VGS=4.5V with a continuous drain current of 2.8A, or 65mΩ at VGS=2.5V with 2.6A. Total gate charge is typically 5.4nC. Operating temperature range spans from -55°C to +150°C.
Verify the specific part number suffix against official documentation to confirm packaging details. Confirm that the component meets required environmental compliance standards such as RoHS and AEC-Q101 if automotive grade reliability is necessary. Ensure the ordering quantity aligns with the standard tape and reel configuration specified by the manufacturer.
Select this component for applications requiring efficient power management within a 20V limit. Consider the thermal characteristics and RDS(ON) variations across different gate voltages when designing for low-voltage drive scenarios. Evaluate the package size constraints against the available footprint in the target PCB layout.
This component belongs to the DMN2065 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology housed in a compact SOT323 case. The datasheet explicitly notes that this specific part is not recommended for new designs and suggests using the DMN2058UW instead.
The datasheet recommends using the DMN2058UW as a replacement for new designs.
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