DMN2075UDW-7

$0.41

Description：MOSFET N-CH 20V 2.8A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4ed29f66b43c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2075UDW-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2.8A SOT363. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2075UDW-7

Description：MOSFET N-CH 20V 2.8A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：48mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：594.3 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-363
Package / Case：6-TSSOP, SC-88, SOT-363

Single FETs, MOSFETs datasheet and documents for DMN2075UDW-7

DMN2075UDW-7

Single FETs, MOSFETs Overview

The DMN2075UDW-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 20 V and a gate-source voltage rating of ±8 V. The device provides a continuous drain current of 2.8 A at TA = 25°C with VGS = 4.5V, or 2.6 A with VGS = 2.5V. Static drain-source on-resistance (RDS(on)) is rated at a maximum of 48 mΩ at VGS = 4.5V and 59 mΩ at VGS = 2.5V. Total power dissipation is 0.5 W in steady state. The component operates within a junction temperature range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Qualified to AEC-Q101 standards to ensure high reliability under automotive operating conditions.
Features low input capacitance and fast switching speed characteristics.

Single FETs, MOSFETs Applications

DC-DC Converters
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the SOT363 case material meets the required UL flammability classification of 94V-0 for your specific assembly process. Ensure compliance with RoHS directives and verify moisture sensitivity level requirements against J-STD-020 standards before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 20 V N-channel MOSFET is required for low-voltage power management circuits. The SOT363 package is suitable for space-constrained surface mount designs. Evaluate the thermal resistance parameters against your system's heat dissipation capabilities, particularly noting the steady-state junction-to-ambient thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the SOT363 surface-mount package, which houses two drains connected internally. The device is designed for general-purpose switching applications requiring low on-resistance and robust thermal performance within a compact footprint.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference pinouts and electrical ratings carefully if considering non-OEM replacements.