DMN22M5UFG-7

Single FETs, MOSFETs Overview

The DMN22M5UFG-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 27A at TC = +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 2.0mΩ max at VGS = 4.5V and 2.6mΩ max at VGS = 2.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from 0.5V to 1.3V, total gate charge (Qg) of 53nC at VGS = 4.5V, and a junction-to-case thermal resistance (RθJC) of 1.7°C/W.

Single FETs, MOSFETs Feature Summary

• Low RDS(ON) minimizes on-state power losses for high-efficiency operation
• PowerDI3333-8 package provides a small form factor with superior thermal efficiency
• Occupies significantly less board area compared to traditional SO-8 packages
• Manufactured using lead-free, halogen-free, and antimony-free materials

Single FETs, MOSFETs Applications

• Backlighting circuits
• DC-DC converters
• General power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and environmental compliance standards required for the target assembly process. Ensure the selected variant matches the intended production volume and reel specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact footprint and high current handling capability are required within a 20V system. Evaluate the thermal performance based on the specific PCB copper area and mounting conditions, as power dissipation varies significantly between ambient and case temperature ratings. Consider the gate threshold voltage range for compatibility with the driving logic levels.

Single FETs, MOSFETs Part Context

This part belongs to the DMN22 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed specifically for applications demanding minimized on-state resistance while maintaining robust switching performance in a highly integrated surface-mount package.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating pinout, electrical characteristics, and thermal limits.