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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 2.11A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.11A (Ta)
- Rds On (Max) @ Id, Vgs：195mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：128.6pF @ 25V
- Power - Max：1.39W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：X2-DFN1310-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN2300UFL4-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1310-6 surface mount package with a footprint of 1.3mm² and a profile of 0.4mm. The device supports a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 2.11A at +25°C. The maximum on-resistance (RDS(ON)) is 195mΩ at VGS=4.5V, 260mΩ at VGS=2.5V, and 380mΩ at VGS=1.8V. Gate threshold voltage ranges from 0.45V to 0.95V. Total gate charge is typically 1.6nC. Power dissipation is 0.53W at +25°C. Operating temperature range is -55°C to +150°C.
Feature Summary
- Ultra-small surface mount package with a footprint of just 1.3mm²
- Low on-state resistance for high efficiency power management
- Fast switching speed with low gate charge
- ESD protected gate structure
Applications
- Load switches
- Portable applications
- Power management functions
Procurement Notes
Verify the component marking code '23N' against the datasheet to confirm authenticity. Ensure the package matches the X2-DFN1310-6 specification. Check RoHS compliance status as required by project specifications. Confirm the reel size is 7 inches and quantity per reel is 3000 units before finalizing procurement orders.
Selection Notes
Select this component when space constraints require a 1.3mm² footprint. Choose for applications needing 20V breakdown and low RDS(ON). Verify thermal requirements against the 238°C/W junction-to-ambient resistance. Consider the 0.4mm profile for height-sensitive designs. Ensure gate drive voltages align with the specified threshold characteristics.
Part Context
This part belongs to the DMN23 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same electrical characteristics as the DMN2300UFL4 but includes the '-7' suffix indicating tape and reel packaging. The series is designed for minimizing conduction loss while maintaining superior switching performance in compact form factors.
Replacement Considerations
Direct pin-compatible replacements within the same series include parts with identical electrical ratings and package dimensions. Verify that any substitute maintains the X2-DFN1310-6 footprint and 0.4mm profile. Ensure the replacement meets the same RDS(ON) and VDS specifications for circuit compatibility.
