DMN2310UFD-7

$0.06

Description：MOSFET BVDSS: 8V~24V U-DFN1212-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3f31591f36ed Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2310UFD-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN1212-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2310UFD-7

Description：MOSFET BVDSS: 8V~24V U-DFN1212-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：240mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：670mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN1212-3 (Type C)
Package / Case：3-PowerUDFN

Single FETs, MOSFETs datasheet and documents for DMN2310UFD-7

DMN2310UFD-7

Single FETs, MOSFETs Overview

The DMN2310UFD-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN1212-3 (Type C) surface-mount package with dimensions of 1.2mm x 1.2mm. The device supports a drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) of ±8V. At TA = +25°C, the continuous drain current (ID) reaches 1.7A at VGS = 4.5V. The static drain-source on-resistance (RDS(ON)) is specified as 240mΩ max at VGS = 4.5V/ID = 1A, and 300mΩ max at VGS = 2.5V/ID = 750mA. Total gate charge (Qg) is typically 0.7nC at VGS = 4.5V/VDS = 10V/ID = 1A.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high efficiency power management
Very low gate threshold voltage for improved drive capability
Low input capacitance and fast switching speed
ESD protected gate structure

Single FETs, MOSFETs Applications

Power Management Functions
Battery Operated Systems
Solid-State Relays
Load Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' to confirm the tape and reel packaging quantity of 3,000 units per reel. Confirm that the component meets RoHS 3 compliance standards and is halogen and antimony free. Ensure the U-DFN1212-3 footprint matches the recommended pad layout provided in the datasheet to maintain thermal performance and solderability.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low RDS(ON) is required for battery-operated or load switch applications. The low gate threshold voltage makes it suitable for systems driven by lower logic levels. Verify that the 20V breakdown voltage and 1.7A continuous current rating align with the maximum circuit demands under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of advanced N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a U-DFN1212-3 case style designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications requiring small form factors.