DMN2310UTQ-13

$0.05

Description：MOSFET BVDSS: 8V~24V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ffb8bd670e25 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2310UTQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2310UTQ-13

Description：MOSFET BVDSS: 8V~24V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：240mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：290mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

Single FETs, MOSFETs datasheet and documents for DMN2310UTQ-13

DMN2310UTQ-13

Single FETs, MOSFETs Overview

The DMN2310UTQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 1.2 A at +25°C. The device offers a typical static drain-source on-resistance (R_DS(on)) of 240 mΩ at V_GS = 4.5 V and 300 mΩ at V_GS = 2.5 V. Packaged in an ultra-small SOT-523 surface mount case, it supports an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Ultra-small surface mount package for space-constrained designs
Low input capacitance and fast switching speed
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

DC-DC converters
Load switches
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable environmental directives and automotive quality standards if intended for regulated industrial or vehicle applications. Ensure proper handling procedures are followed during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when low on-state resistance and high efficiency are critical within a limited footprint. Evaluate thermal performance against the specified junction-to-ambient resistance values. Verify that the gate drive voltage aligns with the optimal R_DS(on) characteristics provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is housed in a molded plastic SOT-523 case. The product line emphasizes minimizing on-state resistance while maintaining superior switching performance.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or general electrical ratings without verifying pinout and thermal specifications.