DMN2310UW-13

Single FETs, MOSFETs Overview

The DMN2310UW-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage rating of ±8V. The device offers a typical on-resistance (RDS(ON)) of 150mΩ at VGS=4.5V and 190mΩ at VGS=2.5V, supporting continuous drain currents of 1.3A at +25°C and 1.1A at +70°C. Total gate charge is typically 0.7nC. It utilizes an SOT323 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
• Features low input capacitance and fast switching speed characteristics suitable for general-purpose interfacing switches and analog switches.

Single FETs, MOSFETs Applications

• General Purpose Interfacing Switch
• Power Management Functions
• DC-DC Converters
• Analog Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 2 and RoHS 3 compliance standards and is halogen-free if environmental specifications are required for the assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT323 footprint is required for low-voltage switching applications. Ensure the design accommodates the thermal resistance limits, particularly noting the steady-state junction-to-ambient thermal resistance values which vary based on PCB copper area and substrate thickness.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2310 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically packaged in the SOT323 case type with a matte tin annealed finish over a copper lead-frame. The -13 suffix indicates the standard 10,000-piece tape and reel quantity for automated manufacturing.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official documentation for qualified alternatives. Verify pinout compatibility and electrical parameter margins before substituting any other MOSFET part numbers in existing designs.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the DMN2310UW?

The maximum pulsed drain current (IDM) is rated at 4.4A, specified with a 10µs pulse duration and a duty cycle of 1%.

Is the DMN2310UW-13 suitable for automotive applications?

Standard versions are not explicitly qualified for automotive use. For applications requiring AEC-Q100/101/200 qualification and PPAP capability, customers must contact Diodes Incorporated directly or their local representative.