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DMN2320UFB4-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 1A X2-DFN1006-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2320UFB4-7B
- Description：MOSFET N-CH 20V 1A X2-DFN1006-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：320mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.89 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：71 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：520mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN2320UFB4-7B
Single FETs, MOSFETs Overview
The DMN2320UFB4-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 20 V and a gate-source voltage (VGSS) rating of ±8 V. The device provides a continuous drain current (ID) of 1.0 A at +25°C, with a pulsed drain current (IDM) capability of 6 A. Static drain-source on-resistance (RDS(on)) is specified as 320 mΩ at VGS = 4.5 V and 500 mΩ at VGS = 2.5 V. Total gate charge (Qg) is typically 0.89 nC. The component operates within an ambient temperature range of -55°C to +150°C and is housed in an X2-DFN1006-3 package.
Single FETs, MOSFETs Feature Summary
- Minimized on-state resistance combined with fast switching speed for high-efficiency power management
- Ultra-small footprint of 0.6mm², significantly reducing board space compared to standard SOT23 packages
- Low profile construction with a height of 0.4mm suitable for compact designs
- Integrated ESD protection rated at 2kV on the gate terminal
Single FETs, MOSFETs Applications
- Load switch applications
- High-efficiency power management circuits
- Low profile portable electronic devices
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7B' against the manufacturer's official documentation to confirm reel size and tape width specifications. Ensure that the required quantity aligns with the standard packaging configuration of 10,000 units per reel. Confirm compliance requirements such as RoHS and halogen-free status directly from the datasheet notes before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when board area constraints are critical due to its X2-DFN1006-3 package dimensions. Consider the low gate threshold voltage and fast switching characteristics for efficient control in power management systems. Evaluate the thermal resistance values relative to the intended PCB copper layout to ensure adequate heat dissipation under steady-state operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is designed specifically for surface mount applications requiring minimal physical footprint. The product line emphasizes reduced on-resistance while maintaining robust switching performance for modern electronic designs.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent part numbers. Cross-referencing should be limited to components explicitly listed as replacements or equivalents in public datasheets.
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