DMN2400UFB4-7

$0.20

Description：MOSFET N-CH 20V 750MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6364dea6d92c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2400UFB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 750MA 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2400UFB4-7

Description：MOSFET N-CH 20V 750MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：550mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：470mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN2400UFB4-7

DMN2400UFB4-7

Single FETs, MOSFETs Overview

The DMN2400UFB4-7 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum continuous drain current of 0.75A at 25°C and a static drain-source on-resistance of 0.55Ω at VGS=4.5V. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 0.47W. Packaged in an X2-DFN1006-3 case, it offers a maximum package height of 0.4mm.

Single FETs, MOSFETs Feature Summary

Ultra-small surface mount package with ultra-low profile
ESD protection up to 1.5kV
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

Battery-powered portable devices
Power management circuits
Low voltage logic level switching

Single FETs, MOSFETs Procurement Notes

Verify the component against the official datasheet DS32025 Rev. 9. Confirm the marking code matches NC for the specified reel size. Ensure compliance with AEC-Q101 standards if high reliability is required. Check for Halogen and Antimony-free status as defined by manufacturer guidelines.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds in a compact footprint. Consider the thermal resistance of 258°C/W when designing heat dissipation strategies. Verify gate threshold voltage requirements align with system logic levels.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an X2-DFN1006-3 package. The device is designed for general-purpose switching applications in consumer electronics.