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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.33A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.33A
- Rds On (Max) @ Id, Vgs：480mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：36pF @ 16V
- Power - Max：530mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN2400UV-7 is a dual N-channel enhancement mode MOSFET in an SOT563 package. It features a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 1.33A at +25°C. The maximum on-resistance (RDS(ON)) is 0.48Ω at VGS=5V and 0.7Ω at VGS=2.5V. Total power dissipation is 530mW, with a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage of 0.9V max, total gate charge of 0.5nC, and input capacitance of 36pF.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- Optimized low on-state resistance for high-efficiency power management
- Low gate threshold voltage enabling direct drive from standard logic levels
- ESD protected gate structure for enhanced reliability
Applications
- Power-management functions
- Battery-operated systems
- Solid-state relays
- Load switches
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity. The '-7' suffix indicates a 3,000-unit tape and reel carrier. Confirm RoHS compliance and halogen-free status requirements against the latest manufacturer quality definitions before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel MOSFET is required within a 20V system. Ensure the application gate drive voltage supports the specified RDS(ON) characteristics. Verify that the thermal design accommodates the 530mW power dissipation limit in the target SOT563 footprint.
Part Context
This device belongs to the DMN2400UV series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a surface-mount SOT563 package designed for automated assembly processes.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without validating pinout and electrical specifications.
FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is 1.33A at an ambient temperature of +25°C.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101 qualification and PPAP capability, contact Diodes Incorporated directly as standard parts may differ from qualified automotive versions.
What is the typical total gate charge?
The typical total gate charge (Qg) is 0.5nC at VGS=4.5V and VDS=10V.
