DMN2450UFB4-7R

Single FETs, MOSFETs Overview

The DMN2450UFB4-7R is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 20 V and a maximum continuous drain current (I_D) of 1.0 A at +25°C. The device offers a low on-state resistance (R_DS(ON)) of 0.4 Ω max at V_GS = 4.5 V, 0.5 Ω max at V_GS = 2.5 V, and 0.7 Ω max at V_GS = 1.8 V. It utilizes an X2-DFN1006-3 package with a footprint of 0.6 mm² and a profile of 0.4 mm. Total power dissipation is rated at 0.5 W on FR-4 substrate with minimum pad layout, or 0.9 W with a 25mm x 25mm copper plate.

Single FETs, MOSFETs Feature Summary

• Extremely compact X2-DFN1006-3 footprint measuring just 0.6 mm², significantly smaller than standard SOT23 packages.
• Low profile design with a height of 0.4 mm, suitable for space-constrained applications.
• Optimized for high efficiency power management through minimized on-state resistance while maintaining fast switching performance.
• Integrated ESD protection on the gate terminal.

Single FETs, MOSFETs Applications

• Load Switch
• High efficiency power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7R' to confirm the reel size and quantity per reel, as the datasheet lists distinct packaging options for different suffixes. Ensure the component meets RoHS 3 compliance requirements if applicable to your manufacturing standards. Confirm that the X2-DFN1006-3 package dimensions align with your PCB footprint guidelines.

Single FETs, MOSFETs Selection Notes

Select this component when a small form factor is critical, given its 0.6 mm² footprint. Consider the R_DS(ON) values at various gate voltages (1.8 V, 2.5 V, 4.5 V) to ensure compatibility with your driver logic levels. Evaluate the thermal resistance (R_θJA) based on your specific PCB copper area and mounting conditions to manage power dissipation effectively.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2450UFB4 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to minimize on-state resistance while maintaining superior switching performance. The series targets applications requiring high efficiency in power management solutions within a minimal physical footprint.

Single FETs, MOSFETs Replacement Considerations

Check for alternative parts within the same DMN2450UFB4 series, such as the DMN2450UFB4-7B, which shares identical electrical characteristics but differs in packaging quantity and reel specifications.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for the DMN2450UFB4-7R?

The maximum continuous drain current is 1.0 A at an ambient temperature of +25°C.

Does the DMN2450UFB4-7R have gate protection?

Yes, the device features an ESD protected gate.