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DMN2450UFB4Q-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X2-DFN1006-. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2450UFB4Q-7B
- Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN2450UFB4Q-7B
Single FETs, MOSFETs Overview
The DMN2450UFB4Q-7B is an N-channel enhancement mode MOSFET in an X2-DFN1006-3 package. It features a 20V drain-source voltage rating and a maximum continuous drain current of 1.0A at +25°C. The device offers low on-resistance, specified as 0.4Ω max at VGS=4.5V and ID=600mA. It includes an internal gate protection diode and is AEC-Q101 qualified for automotive applications.
Single FETs, MOSFETs Feature Summary
- Ultra-small footprint with a case area of 0.6mm²
- Low profile construction suitable for space-constrained designs
- Integrated ESD protection on the gate terminal
- Qualified for automotive use under AEC-Q101 standards
Single FETs, MOSFETs Applications
- Load switching circuits
- High-efficiency power management systems
- Automotive electronic modules requiring specific change control
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the -7B suffix to confirm reel quantity specifications. Ensure compatibility with IATF 16949 certified manufacturing requirements if deploying in automotive contexts. Confirm moisture sensitivity level and soldering parameters align with assembly line capabilities before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when minimal board space and low profile are critical constraints. The low gate threshold voltage supports operation with lower drive voltages. Verify that the thermal resistance characteristics meet the system's heat dissipation requirements under expected load conditions.
Single FETs, MOSFETs Part Context
This device belongs to Diodes Incorporated's advanced MOSFET portfolio designed for miniaturization. The X2-DFN1006-3 package provides significant size reduction compared to traditional SOT23 packages while maintaining robust electrical performance for portable and automotive electronics.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility and package dimensions against existing designs. Verify that alternative components meet the same AEC-Q101 qualification status if used in automotive applications. Ensure thermal and electrical ratings exceed or match the original specifications.
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