DMN2451UFB4Q-7R

Single FETs, MOSFETs Overview

The DMN2451UFB4Q-7R is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 1.3A at +25°C. The device offers low on-state resistance (RDS(ON)) of 0.4Ω at VGS=4.5V, with a gate threshold voltage (VGS(TH)) ranging from 0.5V to 1.0V. Total gate charge (Qg) is 3.4nC at VGS=4.5V. Operating temperature spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
• Features a compact footprint of 0.6mm² and a 0.4mm profile, making it suitable for low-profile designs.
• Includes ESD protected gates and fast switching speeds for reliable operation.
• Qualified for automotive applications under AEC-Q101 standards and capable of PPAP requirements.

Single FETs, MOSFETs Applications

• Load Switch
• High-efficiency power management applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7R' against official documentation to confirm reel size and tape pitch specifications. Ensure that the required automotive qualification status aligns with project needs, as this part is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. Cross-reference datasheet revision numbers during procurement to guarantee compatibility with design parameters.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SOT23 packages. Consider its low gate threshold voltage for compatibility with low-voltage logic drivers. Evaluate thermal dissipation capabilities based on the specific PCB copper area available, as power handling varies with mounting conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2451UFB4Q series of N-channel enhancement mode MOSFETs. It utilizes the X2-DFN1006-3 case configuration, which provides a green molding compound and UL flammability rating of 94V-0. The series is designed to offer optimized trade-offs between conduction losses and switching dynamics.

Single FETs, MOSFETs Replacement Considerations

DMN2451UFB4Q-7B

Single FETs, MOSFETs FAQ

Is the DMN2451UFB4Q-7R suitable for automotive applications?

Yes, the DMN2451UFB4Q is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum operating junction temperature for this MOSFET?

The operating and storage temperature range for the DMN2451UFB4Q extends up to +150°C.