DMN26D0UDJ-7

Description：MOSFET 2N-CH 20V 0.24A SOT963
Series：-

SKU:8cd7ee053ba3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.24A SOT963
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：240mA
Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：14.1pF @ 15V
Power - Max：300mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-963
Supplier Device Package：SOT-963
Grade：-
Qualification：-

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DMN26D0UDJ-7

Overview

The DMN26D0UDJ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage and operates within a junction temperature range of -55 °C to +150 °C. The device utilizes a SOT-963-6 surface-mount package. Key electrical parameters include a continuous drain current of 220 mA, a maximum on-resistance of 1.5 Ohms, and a gate threshold voltage of 400 mV. The component dissipates up to 350 mW of power and exhibits a typical gate charge of 380 pC.

Feature Summary

Dual configuration integrating two independent N-channel transistors in a single compact package
Enhanced mode operation with low gate threshold voltage for efficient logic-level control
Surface-mount design optimized for automated assembly processes

Applications

Low-voltage signal switching circuits
Battery protection modules
General-purpose load switching applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging quantities and reel specifications. Ensure compliance with RoHS directives and check for any recent product change notifications that may affect pinout or material composition prior to final procurement authorization.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. Evaluate the 1.5 Ohm on-resistance against thermal dissipation limits at expected load currents. Confirm that the 30 V voltage rating provides adequate margin for the target application's supply rails.

Part Context

This part belongs to the DMN series of silicon N-channel MOSFETs from Diodes Incorporated. The series focuses on providing cost-effective solutions for portable electronics and battery-powered devices where space constraints are critical. The DMN26D0UDJ-7 variant specifically addresses needs for dual-channel functionality in small outline transistor packages.