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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V
- Power - Max：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN2710UDWQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±6V. The device provides a continuous drain current (ID) of 0.8A at +25°C and 0.6A at +70°C, with a maximum static on-resistance (RDS(ON)) of 0.45Ω at VGS = 4.5V and 0.6Ω at VGS = 2.5V. Packaged in an SOT363 surface-mount case, it includes internal ESD protection diodes and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Dual N-channel configuration within an ultra-small SOT363 surface mount package
- Optimized for low on-state resistance to minimize conduction loss while maintaining superior switching performance
- Includes integrated gate protection diodes and is fully lead-free, RoHS compliant, and halogen/antimony free
- Qualified for automotive applications under AEC-Q101 standards with PPAP capability
Applications
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format when sourcing components. Confirm that the required automotive quality documentation, including PPAP capabilities, aligns with project specifications. Ensure compatibility with IATF 16949 certified manufacturing facilities as stated in the product definition.
Selection Notes
Select this component for high-efficiency power management applications requiring compact dual N-channel solutions. Evaluate thermal constraints based on the junction-to-ambient resistance values provided for different mounting conditions. Consider the low gate threshold voltage characteristics for compatibility with low-voltage logic control signals in portable or battery-powered designs.
Part Context
This part belongs to Diodes Incorporated's advanced generation MOSFET portfolio designed to balance low on-resistance with fast switching speeds. The 'DMN' prefix indicates an N-channel device, while the 'DWQ' suffix denotes the specific SOT363 package variant. The '-13' suffix specifically identifies the standard 10,000-piece tape and reel packaging option for automated assembly.
Replacement Considerations
Direct substitutes must match the 20V BVDSS, SOT363 footprint, and dual N-channel topology. Verify equivalent RDS(ON) limits at 4.5V and 2.5V gate drives. Automotive replacements require matching AEC-Q101 qualification status.
