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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V
- Power - Max：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN2710UDWQ-7 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 0.8A at +25°C. The static drain-source on-resistance (RDS(ON)) is 0.45Ω max at VGS = 4.5V, 0.6Ω max at VGS = 2.5V, and 0.75Ω max at VGS = 1.8V. Total gate charge (Qg) is typically 0.6nC at VGS = 4.5V. Operating temperature range is -55°C to +150°C.
Feature Summary
- Dual N-channel configuration with integrated ESD protection
- Optimized for low on-state resistance and fast switching performance
- Low gate threshold voltage suitable for battery-operated systems
- Automotive qualified under AEC-Q101 standards
Applications
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel quantity of 3,000 units, while '-13' denotes 10,000 units per reel. Confirm that the required packaging format aligns with your manufacturing equipment capabilities before placing orders.
Selection Notes
Select this component for applications requiring a compact dual N-channel solution with low power dissipation. Ensure the gate drive voltage meets the minimum requirements for the desired RDS(ON) level. Verify thermal management strategies are adequate given the small SOT363 footprint and specified thermal resistance values.
Part Context
This part belongs to Diodes Incorporated's advanced generation MOSFET family designed for high-efficiency power management. It utilizes a molded plastic case material classified as UL 94V-0 flammability rated. The device is manufactured in IATF 16949 certified facilities and is halogen and antimony free.
Replacement Considerations
DMN2710UDWQ-13 serves as a direct functional substitute differing only in reel quantity (10,000 vs 3,000 units). Other dual N-channel MOSFETs in the SOT363 package may be considered if electrical parameters such as BVDSS, ID, and RDS(ON) meet or exceed the specifications of the DMN2710UDWQ.
FAQ
What is the maximum continuous body diode forward current?
The maximum continuous body diode forward current (IS) is 0.47A.
Is the DMN2710UDWQ-7 suitable for automotive applications?
Yes, the DMN2710UDWQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
What is the typical input capacitance (Ciss)?
The typical input capacitance (Ciss) is 42pF, measured at VDS = 16V, VGS = 0V, and f = 1.0MHz.
