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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.92A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：920mA (Ta)
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN2710UV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and an on-state resistance (RDS(ON)) of 0.45Ω at VGS = 4.5V, with a continuous drain current (ID) of 0.92A at +25°C. The device operates within a temperature range of -55°C to +150°C and utilizes an SOT563 surface-mount package. Key electrical parameters include a gate threshold voltage under 1V, input capacitance of 42pF, and total gate charge of 0.6nC.
Feature Summary
- Dual N-channel configuration in an ultra-small surface mount package
- Low on-resistance optimized for high efficiency power management
- Fast switching speed with low input/output leakage currents
- ESD protected gate structure
Applications
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packaging quantity of 3,000 units as documented in the official datasheet. Confirm that the component meets RoHS 3 compliance and Halogen-free requirements if environmental standards are critical for the intended application.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. Ensure the design accommodates the 20V drain-source voltage limit and the thermal constraints associated with the SOT563 package's junction-to-ambient thermal resistance.
Part Context
This part belongs to the DMN2710UV series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance, targeting high-efficiency power management applications in portable and battery-operated devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications before considering alternative manufacturers or different package types.
