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Product Detailed Parameters
- Description：MOSFET N-CH 20V 250MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：55.2 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0606-3
- Package / Case：3-XFDFN
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Overview
The DMN2990UFZ-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 250mA at +25°C. The device exhibits a maximum on-resistance of 0.99Ω at VGS=4.5V and 1.2Ω at VGS=2.5V. Total gate charge is typically 0.5nC with a maximum of 1.0nC. Input capacitance ranges from 28.2pF to 55.2pF, while output capacitance is between 4.0pF and 8.0pF. Turn-on rise time is 2.1ns, and turn-off fall time is 7.7ns. Power dissipation is 320mW, operating temperature spans -55°C to +150°C, and the package is X2-DFN0606-3.
Feature Summary
- Low package profile with a maximum height of 0.42mm and a footprint of 0.62mm x 0.62mm
- Very low gate threshold voltage with a maximum value of 1.0V
- ESD protected gate structure for enhanced reliability
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the ordering suffix matches the required packaging configuration. Confirm that the component meets specific environmental compliance requirements such as RoHS and halogen-free status if mandated by the design. Ensure the supplier provides traceability documentation consistent with automotive qualification standards where applicable. Cross-reference the marking code on the physical component against official manufacturer documentation to prevent counterfeit parts.
Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage switching tasks. The low gate threshold voltage allows compatibility with logic-level drivers. Evaluate thermal constraints carefully due to the small package size and limited power dissipation rating. Consider the total gate charge and capacitance values for high-speed switching efficiency in power management circuits.
Part Context
This part belongs to the DMN2990 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. These devices are designed for high-efficiency power management applications requiring small form factors and robust electrical characteristics within a 20V voltage range.
Replacement Considerations
Check datasheets for alternative single N-channel MOSFETs in the X2-DFN0606-3 package. Verify that replacement candidates match the 20V drain-source voltage and 250mA continuous current ratings. Ensure the on-resistance and gate threshold voltage specifications align with the original circuit design requirements.
