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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.52A SOT963
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：520mA (Ta)
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：21.5pF @ 15V
- Power - Max：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-963
- Supplier Device Package：SOT-963
- Grade：-
- Qualification：-
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Overview
The DMN2991UDJ-7A is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device provides a continuous drain current (ID) of 520mA at TA = +25°C with VGS = 4.5V, and a pulsed drain current (IDM) of 1.4A. Static drain-source on-resistance (RDS(ON)) is specified as a maximum of 0.99Ω at VGS = 4.5V and ID = 100mA. Total power dissipation (PD) is rated at 0.4W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small SOT963 surface mount package
- Low on-resistance optimized for high-efficiency power management applications
- Very low gate threshold voltage enabling operation at reduced gate drive levels
- ESD protected gate structure with fully lead-free and RoHS compliant construction
Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Procurement Notes
Verify the specific ordering suffix '7A' against the manufacturer's datasheet to confirm the inclusion of a Pin 1 indicator marking. Ensure that the required packaging quantity matches the standard 10K tape and reel specification provided for this part number variant.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Evaluate the thermal resistance and power dissipation limits relative to the expected load current and ambient temperature conditions to ensure reliable operation within the specified junction temperature range.
Part Context
This component belongs to the DMN2991UDJ series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining fast switching performance suitable for portable and battery-powered electronic devices requiring efficient power control.
Replacement Considerations
The DMN2991UDJ-7 serves as a direct functional equivalent without the Pin 1 indicator marking. Verify pinout compatibility and electrical parameters before substituting.
