DMN2991UDJ

DMN2991UDJ

  • Description:MOSFET 2N-CH 20V 0.52A SOT963
  • Series:-

SKU:0349fab87494 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 0.52A SOT963
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:520mA (Ta)
  • Rds On (Max) @ Id, Vgs:990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.35C @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:21.5pF @ 15V
  • Power - Max:400mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-963
  • Supplier Device Package:SOT-963
  • Grade:-
  • Qualification:-

Download product information

DMN2991UDJ

Overview

The DMN2991UDJ is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device offers low on-resistance, with RDS(ON) values ranging from 0.48Ω to 2.4Ω depending on the gate drive voltage and current conditions. Continuous drain current capabilities vary between 308mA and 520mA based on temperature and gate voltage. Key electrical parameters include a gate threshold voltage (VGS(TH)) of up to 1.0V, total gate charge (Qg) of 0.35nC, and input capacitance (Ciss) of 21.5pF. Thermal characteristics specify a total power dissipation of 0.4W and a junction-to-ambient thermal resistance of 312°C/W.

Feature Summary

  • Dual N-channel configuration in an ultra-small SOT963 surface mount package
  • Low on-state resistance optimized for high-efficiency power management
  • Very low gate threshold voltage enabling operation at reduced gate drive levels
  • Fast switching speed supported by low input capacitance and gate charge

Applications

  • General purpose interfacing switch
  • Power management functions
  • DC-DC converters
  • Analog switch applications

Procurement Notes

Verify the specific ordering suffix when purchasing, as the base part number may be available with or without a pin 1 indicator marking. Confirm that the selected variant meets the required packaging quantity and reel specifications for your assembly line. Ensure compliance with RoHS and halogen-free requirements if mandated by your design standards.

Selection Notes

Select this component for designs requiring compact dual-switch solutions with low conduction losses. Evaluate the gate drive voltage against the specified RDS(ON) curves to ensure adequate current handling. Consider the thermal resistance and power dissipation limits when determining heat sinking needs or PCB copper area allocation for the application environment.

Part Context

This device belongs to the DMN2991 series of dual N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with variants such as the DMN2991UVQ and DMN2991UDA-7B, differing primarily in the physical package type and dimensions. The SOT963 package provides a 1mm x 1mm footprint suitable for space-constrained portable electronics.

Replacement Considerations

Direct substitutes include other DMN2991 series parts like DMN2991UDA-7B or DMN2991UVQ-13, provided the package footprint matches the existing PCB layout. Verify that any replacement maintains the same 20V BVDSS rating and comparable RDS(ON) performance at the intended operating gate voltage.

DMN2991UDJDMN2991UDJ

Click on the inquiry