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The DMN2991UDJ is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device offers low on-resistance, with RDS(ON) values ranging from 0.48Ω to 2.4Ω depending on the gate drive voltage and current conditions. Continuous drain current capabilities vary between 308mA and 520mA based on temperature and gate voltage. Key electrical parameters include a gate threshold voltage (VGS(TH)) of up to 1.0V, total gate charge (Qg) of 0.35nC, and input capacitance (Ciss) of 21.5pF. Thermal characteristics specify a total power dissipation of 0.4W and a junction-to-ambient thermal resistance of 312°C/W.
Verify the specific ordering suffix when purchasing, as the base part number may be available with or without a pin 1 indicator marking. Confirm that the selected variant meets the required packaging quantity and reel specifications for your assembly line. Ensure compliance with RoHS and halogen-free requirements if mandated by your design standards.
Select this component for designs requiring compact dual-switch solutions with low conduction losses. Evaluate the gate drive voltage against the specified RDS(ON) curves to ensure adequate current handling. Consider the thermal resistance and power dissipation limits when determining heat sinking needs or PCB copper area allocation for the application environment.
This device belongs to the DMN2991 series of dual N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with variants such as the DMN2991UVQ and DMN2991UDA-7B, differing primarily in the physical package type and dimensions. The SOT963 package provides a 1mm x 1mm footprint suitable for space-constrained portable electronics.
Direct substitutes include other DMN2991 series parts like DMN2991UDA-7B or DMN2991UVQ-13, provided the package footprint matches the existing PCB layout. Verify that any replacement maintains the same 20V BVDSS rating and comparable RDS(ON) performance at the intended operating gate voltage.