DMN2992UFZ-7B

Single FETs, MOSFETs Overview

The DMN2992UFZ-7B is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in an X2-DFN0606-3 footprint. It features a maximum drain-source voltage (VDSS) of 20V and a gate-source voltage (VGSS) rating of ±8V. The device offers low on-state resistance, with RDS(ON) values ranging from 0.4Ω to 2.4Ω depending on the gate drive voltage and current conditions. Continuous drain current (ID) reaches 530mA at +25°C, while pulsed drain current (IDM) supports up to 1500mA. Total power dissipation is rated at 420mW, with a thermal resistance junction-to-ambient of 295°C/W. Operating temperatures span from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high-efficiency power management by minimizing on-state resistance while maintaining superior switching performance.
• Features a very low package profile with a maximum height of 0.4mm and a compact 0.62mm × 0.62mm footprint.
• Includes ESD protection on the gate terminal to enhance reliability during handling and operation.
• Manufactured as a totally lead-free and fully RoHS compliant device that is also halogen and antimony free.

Single FETs, MOSFETs Applications

• General-purpose interfacing switches
• Power-management functions
• Analog switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm the component utilizes the X2-DFN0606-3 package type. Ensure compliance requirements match the manufacturer's definitions for halogen-free and antimony-free status. Validate that the application environment remains within the specified -55°C to +150°C operating temperature range.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints require a minimal 0.62mm x 0.62mm footprint. Choose this part for applications requiring a 20V breakdown voltage with low gate threshold capabilities. Consider this device for circuits needing fast switching speeds supported by low total gate charge characteristics. Evaluate thermal management needs based on the 295°C/W junction-to-ambient resistance value.

Single FETs, MOSFETs Part Context

This component belongs to the DMN2992 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance solutions suitable for portable and battery-powered devices. The DMN2992UFZ variant specifically utilizes the X2-DFN0606-3 package to offer a reduced physical profile compared to standard surface-mount options.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent part numbers. Cross-reference pin configurations and electrical parameters before substituting any alternative components.