DMN3005LK3-13

Description：MOSFET N-CH 30V 14.5A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d86e5c9ea269 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN3005LK3-13 is listed in the Mosfets range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 14.5A TO252-3. Review the specifications below when checking this part for your BOM.

Mosfets specifications for DMN3005LK3-13

Description：MOSFET N-CH 30V 14.5A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46.9 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4342 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.68W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Mosfets datasheet and documents for DMN3005LK3-13

DMN3005LK3-13

Mosfets Overview

The DMN3005LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252 (DPAK) surface-mount package and operates with a drain-source voltage of 30 V and a gate-source voltage of ±20 V. The device supports a continuous drain current of 14.5 A at +25°C and up to 22 A under specific thermal conditions. Its static drain-source on-resistance ranges from 2.5 mΩ to 6.5 mΩ depending on the gate drive voltage and current. The component is designed for fast switching speeds, low input capacitance, and low leakage currents.

Mosfets Feature Summary

Totally lead-free and fully RoHS compliant construction
Halogen and antimony free "Green" device
Qualified to AEC-Q101 standards for high reliability
ESD protected structure

Mosfets Applications

Power management circuits
DC-DC converter modules
Load switch applications

Mosfets Procurement Notes

Verify the current design status before procurement, as the datasheet explicitly marks this component as not recommended for new designs. Confirm that existing inventory meets long-term supply requirements for legacy systems. Ensure compliance with environmental specifications regarding halogen and antimony content if required by your manufacturing standards.

Mosfets Selection Notes

Select this component for applications requiring a 30 V N-channel MOSFET in a TO-252 package. Evaluate the on-resistance values against your specific gate drive voltages, as performance varies significantly between 4.5 V and 10 V drives. Consider the thermal resistance characteristics when designing heat dissipation strategies for steady-state or pulsed current operations.

Mosfets Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a standard TO-252 case. The product line focuses on providing low on-resistance and fast switching capabilities for general-purpose power switching applications.