DMN3006SCA6-7

$0.32

Description：MOSFET 2N-CH 30V 13A X4-DSN3519
Series：-

SKU:9932a295fa21 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 13A X4-DSN3519
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：13A (Ta)
Rds On (Max) @ Id, Vgs：5.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：17.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：2235pF @ 15V
Power - Max：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：X4-DSN3519-6
Grade：-
Qualification：-

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DMN3006SCA6-7

Overview

The DMN3006SCA6-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BV_DSS) of 30V and a low on-resistance (R_DS(on)) ranging from 2.5mΩ to 9.0mΩ depending on the gate-source voltage. The device supports continuous source currents up to 13.0A at V_GS = 8V and 11.5A at V_GS = 4.5V, with a pulsed current rating of 80A. Packaged in an X4-DSN3519-6 footprint measuring 3.5mm x 1.9mm with a height of 0.11mm, it offers high power density. Operating temperatures range from -55°C to +150°C.

Feature Summary

Ultra-low profile package design with a height of 0.11mm for space-constrained applications.
Integrated ESD protection circuitry on the gate terminal to enhance component reliability.
Totally lead-free construction that is fully RoHS compliant and halogen-free.

Applications

Battery management systems
Load switching circuits
Battery protection modules

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS 3 and REACH status against current regulatory standards before finalizing procurement orders.

Selection Notes

Select this component when a compact surface-mount solution is required for 30V DC load switching. Ensure the application gate drive voltage aligns with the specified R_DS(on) performance curves, typically requiring 4.5V or higher for optimal conduction efficiency.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the X4-DSN3519-6 case style, which provides a small footprint suitable for dense PCB layouts while maintaining adequate thermal dissipation characteristics for portable electronics.