DMN3008SCP10-7

$0.35

Description：MOSFET BVDSS: 25V 30V X4-DSN3415
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:359ac22e0618 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V 30V X4-DSN3415
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：14.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1476 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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DMN3008SCP10-7

Overview

The DMN3008SCP10-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum source-source breakdown voltage of 30V and a typical static source-source on-resistance of 7.8mΩ at VGS=10V. The device supports a continuous source current of 14.6A at +25°C ambient temperature. It utilizes the X4-DSN3415-10 package with dimensions of 3.37mm x 1.47mm x 0.2mm. Total gate charge is specified as 31.3nC at VGS=10V.

Feature Summary

Integrated gate-source protection diode providing electrostatic discharge immunity up to 2kV under human body model testing.
Designed for high efficiency power management applications through minimized on-state resistance within a compact footprint.
Constructed using lead-free materials that are fully compliant with RoHS directives and free from halogens and antimony.

Applications

Battery Management Systems
Load Switching Circuits
Battery Protection Modules

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm the component meets AEC-Q101 qualification standards if automotive application requirements apply, noting the gate-source voltage limit may differ in such contexts. Ensure the procurement documentation matches the exact part number to avoid confusion with similar variants.

Selection Notes

Select this component for designs requiring low on-resistance and high current handling in space-constrained environments. Evaluate thermal performance based on the junction-to-ambient thermal resistance of 46.9°C/W when mounted on standard FR-4 material. Consider the gate threshold voltage range for logic compatibility and ensure the operating temperature range aligns with system requirements.

Part Context

This device belongs to the DMN3008SCP series of N-channel MOSFETs from Diodes Incorporated. It is engineered to balance low conduction losses with superior switching characteristics. The product line targets modern power management solutions where size reduction and efficiency are critical design parameters.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinout configurations and electrical ratings carefully before implementing any substitute components.