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Product Detailed Parameters
- Description：MOSFET N-CH 30V 60A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMN3009LFVW-13 is a single N-channel enhancement mode silicon MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage and a continuous drain current of 60 A. The device exhibits a maximum on-resistance of 5.5 mΩ at 10 V gate drive. It operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 2.3 W. The component utilizes the PowerDI3333-8 surface-mount package.
Feature Summary
- Integrates a built-in body diode for synchronous rectification applications
- Utilizes PowerDI3333-8 packaging for optimized thermal performance and compact footprint
- Designed for high-efficiency power switching in low-voltage environments
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm package type and reel specifications. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before integration into regulated products.
Selection Notes
Select this component for designs requiring high current handling in minimal space. Evaluate thermal constraints based on the 2.3 W dissipation limit. Compare on-resistance values against system efficiency targets. Verify that the 30 V voltage rating exceeds peak circuit transients.
Part Context
This part belongs to the DMN series of small signal field-effect transistors from Diodes Incorporated. The series focuses on N-channel silicon MOSFETs designed for general-purpose switching. The PowerDI package family provides standardized dimensions for automated placement.
Replacement Considerations
Consult official substitution guides for parameter-equivalent alternatives. Verify pinout compatibility and thermal characteristics when considering cross-manufacturer replacements.
