DMN3009LFVW-7

$0.77

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cd472b4b4adb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN3009LFVW-7

Overview

The DMN3009LFVW-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 (SWP) packaging and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage of 30V, a continuous drain current of 60A at 25°C case temperature, and a maximum on-resistance of 5.0mΩ at VGS=10V. The device features a total gate charge of 42nC at VGS=10V and supports a pulsed drain current of 90A.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products and occupies significantly less board area than traditional SO-8 packages.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm tape and reel quantities and packaging specifications. Ensure that the component meets all applicable environmental compliance standards required for the intended deployment environment before finalizing procurement decisions.

Selection Notes

Select this component when low on-state resistance and compact physical dimensions are critical requirements. Evaluate thermal dissipation capabilities based on the specific PCB layout and copper thickness, as thermal resistance varies significantly between minimum pad layouts and boards with thermal bias to bottom layers.

Part Context

This part belongs to the DMN3009LFVW series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for applications requiring high current handling in minimal space. The product summary indicates its primary design focus is minimizing conduction losses without compromising switching speed.