DMN3009SFGQ-13

$0.34

Description：MOSFET N-CH 30V 16A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1f09affe88ed Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 16A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3009SFGQ-13

Overview

The DMN3009SFGQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package and is qualified to AEC-Q101 standards for automotive applications. Key electrical parameters include a drain-source breakdown voltage of 30V, a maximum continuous drain current of 45A at TC=+25°C, and a static drain-source on-resistance of 5.5mΩ max at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for stringent automotive requirements with AEC-Q101 qualification and PPAP capability.
Features low on-resistance and low input capacitance for efficient power management.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Power Management Functions
DC-DC Converters
Batteries

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required IATF 16949 manufacturing facility standards for automotive change control. Ensure compatibility with the specified PowerDI3333-8 footprint during procurement planning.

Selection Notes

Select this component when a 30V N-channel MOSFET with high current handling in a compact PowerDI3333-8 package is required. Consider its AEC-Q101 qualification for automotive environments. Evaluate thermal performance against the specified RθJA values for the intended PCB layout and ambient conditions.

Part Context

This part belongs to the DMN3009 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the same core electrical specifications as the DMN3009SFGQ-7 variant but differs in the standard factory packaging quantity. Both variants utilize the identical PowerDI3333-8 case outline and pinout configuration.

Replacement Considerations

The DMN3009SFGQ-7 is a confirmed substitute part number offering identical electrical characteristics and package dimensions. Verify that the alternative packaging quantity aligns with production needs without altering the circuit design or board layout.