DMN3009SK3-13

$0.70

Description：MOSFET N-CHANNEL 30V 80A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:615286fe2532 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CHANNEL 30V 80A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN3009SK3-13

Overview

The DMN3009SK3-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 5.5mΩ at VGS=10V and 9.0mΩ at VGS=4.5V. The device supports continuous drain currents up to 80A at TC=+25°C and 60A at TC=+70°C. Packaged in a TO252 (DPAK) case, it includes an integrated body diode with a forward voltage of 1V at IS=1A. Total gate charge is 42nC at VGS=10V.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability.
Features low input capacitance and low on-resistance.

Applications

Power Management Functions
DC-DC Converters
Industrial Applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C.

Selection Notes

Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for DC-DC converters or industrial power management. The TO252 package provides a balance of thermal dissipation and board space. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction characteristics.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TO252 (DPAK) plastic case. The device is designed to minimize self-heating effects during operation.