DMN3009SSS-13

$0.77

Description：MOSFET N-CH 30V 15A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fded21d63e04 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN3009SSS-13

Overview

The DMN3009SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 15A at +25°C. The device offers a maximum on-resistance of 5.5mΩ at VGS=10V and 7.5mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Verified reliability through 100% unclamped inductive switching (UIS) testing during production.
Compliant with RoHS directives and free from halogen and antimony compounds.

Applications

Motor Control
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the absence of halogens and antimony. Ensure the selected variant matches the intended thermal and electrical requirements for the target application.

Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds. Consider the SO-8 package dimensions and thermal characteristics when designing the PCB layout. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with the driving circuitry and desired switching frequencies.

Part Context

This part belongs to the DMN3009SSS series of N-channel enhancement mode MOSFETs. It is designed for general-purpose switching applications where efficiency and speed are critical. The device integrates a body diode and is optimized for use in compact power management solutions.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Cross-referencing should be performed based on matching electrical parameters, package type, and thermal characteristics to ensure functional compatibility.