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Product Detailed Parameters
- Description：MOSFET N-CH 30V 11A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2075 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3010LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current of 11A at an ambient temperature of 25°C, increasing to 30A when the case temperature is maintained at 25°C. The static drain-source on-resistance is specified as 8.5mΩ at VGS=10V and 10.5mΩ at VGS=4.5V. Total gate charge reaches 37nC at VGS=10V. The component utilizes a POWERDI3333-8 surface-mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area occupied by SO-8
- Rated for 100% Unclamped Inductive Switching (UIS) and 100% Rg tested
- Qualified to AEC-Q101 Standards for High Reliability
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 3,000 units per reel. Confirm that the standard compliance requirements align with project specifications, noting the device is totally lead-free, fully RoHS compliant, and halogen and antimony free. Ensure the selected variant matches the exact thermal and electrical characteristics documented in the official datasheet before finalizing procurement orders.
Selection Notes
Select this component for designs requiring low on-state losses and compact footprint solutions. The POWERDI3333-8 package offers significant board area reduction compared to traditional SO-8 packages. Evaluate thermal management strategies based on the specified thermal resistance values for both ambient and case-mounted configurations. Consider the 30V breakdown voltage and current ratings to ensure adequate headroom for the target DC-DC converter or power management circuit operation.
Part Context
This part belongs to the DMN3010 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance to improve efficiency in power management applications. The 'LFG' designation indicates the specific package type and material composition, while the '-13' suffix denotes the standard packaging format provided in tape and reels.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing requires matching critical parameters such as the 30V drain-source voltage, 8.5mΩ on-resistance at VGS=10V, and the POWERDI3333-8 package dimensions to ensure functional compatibility.
