DMN3010LK3-13

$0.72

Description：MOSFET N-CH 30V 13.1A/43A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7e79175a4d24 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 13.1A/43A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13.1A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2075 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN3010LK3-13

Overview

The DMN3010LK3-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK-3) surface-mount package. It features a drain-source voltage of 30V and a continuous drain current of 43A at +25°C case temperature. The device offers a low on-state resistance of 9.5mΩ at VGS=10V and 11.5mΩ at VGS=4.5V. Total gate charge is 16.1nC at VGS=4.5V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products.
Qualified to AEC-Q101 standards for high reliability automotive applications.

Applications

Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS36762 Rev. 2-2. Confirm the marking code 'N3010L' matches the specific lot. Ensure compliance with RoHS and REACH directives as specified by the manufacturer. Check for any product change notifications or lifecycle status updates directly from Diodes Incorporated before finalizing procurement.

Selection Notes

Select this component when a 30V N-channel MOSFET with high current capability is required. The low RDS(ON) makes it suitable for minimizing conduction losses in power circuits. Consider the thermal resistance values provided in the datasheet for heat dissipation planning. Verify that the gate drive voltage aligns with the specified thresholds for optimal switching characteristics.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated under the PowerDI brand. It utilizes silicon technology and is packaged in a lead-free, halogen-free, and antimony-free green compound. The TO252-3L case provides a robust mechanical structure with UL flammability classification rating 94V-0.