DMN3011LFDF-7

$0.12

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a898974b4ed8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMN3011LFDF-7

Overview

The DMN3011LFDF-7 is a 30V N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a U-DFN2020-6 (Type F) housing. It features a maximum drain-source voltage of 30V and a gate-source voltage rating of ±20V. The device offers a low on-resistance of 12mΩ at VGS=10V with a continuous drain current of 10.8A at +25°C. Thermal resistance to ambient is 88.2°C/W, while junction-to-case is 4.7°C/W. Total power dissipation reaches 1.4W at +25°C. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features a compact 0.6mm profile and a PCB footprint of 4mm², making it suitable for low-profile designs.
Totally lead-free and fully RoHS compliant, also halogen and antimony free.

Applications

Battery management systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the exact ordering suffix matches the required packing quantity. The DMN3011LFDF-7 variant specifies a tape and reel carrier with a packing quantity of 3,000 units. Confirm that the component meets specific automotive qualification requirements if applicable, as standard versions may differ from AEC-Q101 certified parts.

Selection Notes

Select this component when a small form factor is critical due to its U-DFN2020-6 package dimensions. Evaluate thermal constraints carefully, as the junction-to-ambient resistance is relatively high without an extended copper heat sink. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the DMN3011LFDF series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type F) package. The product line focuses on providing low on-resistance and fast switching capabilities within a minimal physical footprint for modern electronic designs.

Replacement Considerations

Check datasheet specifications for direct pin-compatible alternatives within the same manufacturer's portfolio. Verify that any substitute maintains identical package dimensions, electrical ratings, and thermal characteristics to ensure circuit compatibility without redesign.