DMN3011LFVWQ-13

$0.17

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:99fd501a02b9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN3011LFVWQ-13

Overview

The DMN3011LFVWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 30 V, a continuous drain current (Id) of 58 A, and a maximum on-resistance (Rds(on)) of 11 mOhms. The device supports a gate-source voltage range of ±20 V with a threshold voltage of 2.25 V. It features a gate charge of 19.7 nC and operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 2.6 W.

Feature Summary

High current handling capability with a 58 A continuous drain current rating.
Low on-resistance design for efficient power switching applications.
Robust thermal performance supporting operation up to 150°C junction temperature.

Applications

Power management circuits requiring high efficiency
DC-DC converter output stages
Load switching applications

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm exact tape-and-reel quantities and packaging variations. Ensure compatibility with standard SMD/SMT assembly processes for the PowerDI3333-8 footprint. Cross-reference datasheet revisions to confirm parameter stability before finalizing procurement orders.

Selection Notes

Select this component when high current density and low conduction losses are required in a compact surface-mount form factor. The 30 V rating suits low-voltage DC systems. Evaluate thermal constraints carefully given the 2.6 W dissipation limit in the small PowerDI package. Compare gate charge requirements against driver capabilities for optimal switching speed.

Part Context

This part belongs to the Diodes Incorporated MOSFET family, specifically designed for general-purpose switching in space-constrained electronics. The PowerDI3333-8 package offers a balance between thermal performance and board area efficiency compared to traditional transistor packages.