DMN3011LSS-13

$0.14

Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:896728061a28 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.58W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN3011LSS-13

Overview

The DMN3011LSS-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 58 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 11 mΩ at Vgs = 10 V and Id = 58 A. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 2.6 W. The component is housed in an 8-SOP (SOIC-8) package, specifically PowerDI 3333-8, designed for efficient thermal management in compact circuit layouts.

Feature Summary

High current handling capability with 58 A continuous drain current rating
Low on-resistance design for improved power efficiency
Robust thermal performance in compact PowerDI 3333-8 package
Wide operating temperature range suitable for demanding environments

Applications

DC-DC converter output stages
Motor control circuits
Power distribution networks
Load switching applications

Procurement Notes

Verify the exact part number against official Diodes Incorporated documentation to ensure compatibility with specific application requirements. Confirm that the PowerDI 3333-8 package dimensions align with your PCB footprint specifications. Check for any recent updates to the datasheet regarding electrical characteristics or recommended soldering profiles to guarantee reliable assembly and long-term operational stability.

Selection Notes

Select this component when high current capacity and low conduction losses are critical in space-constrained designs. The 30 V rating suits low-voltage DC systems. Ensure gate drive voltages remain within specified limits to maintain optimal Rds(on). Consider thermal management strategies given the 2.6 W dissipation rating in the small form factor package to prevent overheating during sustained operation.

Part Context

This N-channel MOSFET belongs to Diodes Incorporated's PowerDI series, which integrates advanced silicon technology into compact packages. The DMN3011LSS-13 variant specifically targets applications requiring high current density and efficient heat dissipation. Its construction leverages planar trench technology to achieve low on-resistance while maintaining robust avalanche capabilities, making it suitable for modern power electronics where size and efficiency are paramount.