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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 20A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.1nC @ 4.5V, 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：850pF @ 15V, 1480pF @ 15V
- Power - Max：2.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：PowerDI3333-8 (Type D)
- Grade：-
- Qualification：-
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Overview
The DMN3012LEG-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of ±10V. The device provides continuous drain currents of 20A at TC=+25°C and 10A at TA=+25°C. Q1 exhibits a maximum on-resistance (RDS(ON)) of 12mΩ at VGS=5V and ID=15A, while Q2 reaches 6mΩ under identical conditions. Total gate charges are 6.1nC for Q1 and 12.6nC for Q2 at VGS=4.5V. Thermal resistance from junction to ambient is 58°C/W, with an operating temperature range spanning -55°C to +150°C.
Feature Summary
- Dual configuration designed to minimize on-state resistance while maintaining superior switching performance.
- Manufactured using silicon technology with lead-free finish, RoHS compliance, and halogen/antimony-free green materials.
- Includes 100% unclamped inductive switch (UIS) testing during production to ensure robustness.
Applications
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the authenticity of the DMN3012LEG-7 by checking the manufacturer's marking code against official documentation. Confirm that the component utilizes the specified PowerDI3333-8 case type and matches the ordering information provided by Diodes Incorporated. Ensure sourcing channels are authorized to prevent counterfeit parts.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage power management. The PowerDI3333-8 package offers efficient thermal dissipation suitable for space-constrained designs. Evaluate the specific RDS(ON) requirements for each channel, as Q1 and Q2 possess distinct electrical characteristics within the same package.
Part Context
This part belongs to the DMN3012 series of synchronous N-channel enhancement mode MOSFETs. It shares the same core die and electrical specifications as the DMN3012LEG-13 variant, differing only in the reel quantity packaging. Both utilize the PowerDI3333-8 form factor for surface-mount applications.
Replacement Considerations
The DMN3012LEG-13 serves as a direct replacement with identical electrical parameters and pinout, differing solely in tape and reel packaging quantities. Verify compatibility with existing PCB layouts before substitution.
