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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 9.5A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs：14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V
- Power - Max：2.16W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：PowerDI3333-8 (Type D)
- Grade：-
- Qualification：-
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Overview
The DMN3013LFG-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in the PowerDI3333-8 (Type D) package. It features a drain-source voltage (BVDSS) of 30V and a maximum on-resistance (RDS(ON)) of 14.3mΩ at VGS=8V, ID=4A. Continuous drain current reaches 15A at TC=25°C and 9.5A at TA=25°C. The device includes an integrated body diode with a forward voltage of 1.0V max at IS=4A. Thermal resistance from junction to ambient is 58.8°C/W, supporting operation between -55°C and +150°C.
Feature Summary
- Dual synchronous configuration designed for high-efficiency power management applications
- Optimized low on-state resistance combined with fast switching performance
- Manufactured using lead-free, halogen-free, and antimony-free green materials
Applications
- DC-DC Converters
- Power Management Functions
- Analog Switch
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific environmental declarations regarding halogen and antimony content. Ensure packaging matches the specified tape and reel format for automated assembly processes.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage synchronous rectification. Evaluate thermal constraints carefully as the PowerDI3333-8 package has limited heat dissipation capabilities compared to larger packages. Verify gate drive voltage compatibility with the specified RDS(ON) test conditions.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET lineup focusing on minimizing on-state resistance while maintaining superior switching performance. It utilizes the PowerDI3333-8 (Type D) surface-mount case material, which provides a compact footprint suitable for space-constrained PCB layouts.
Replacement Considerations
Consult official datasheets for alternative dual N-channel MOSFETs within the same voltage class. Verify pinout compatibility and thermal resistance characteristics before substitution.
