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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8.4A (Ta)
- Rds On (Max) @ Id, Vgs：15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1415pF @ 15V
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMN3015LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) rating of ±20V. The device provides a continuous drain current (ID) of 8.4A at +25°C, with a pulsed drain current (IDM) capability of 80A. The static drain-source on-resistance (RDS(on)) is specified as 15mΩ max at VGS = 10V and 18mΩ max at VGS = 4.5V. Total gate charge (Qg) is 25.1nC at VGS = 10V. Thermal characteristics include a total power dissipation (PD) of 1.6W at +25°C and a junction-to-ambient thermal resistance (RθJA) of 78°C/W under steady-state conditions.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Low input capacitance and low on-resistance to maintain superior switching performance
- Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction
- Qualified to AEC-Q101 standards for automotive high reliability requirements
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS36300 Rev. 2 - 2 to confirm electrical parameters and mechanical specifications. Ensure that the SO-8 package dimensions and pin configurations match the required PCB layout. Check for compliance with environmental directives such as RoHS and REACH if applicable to the target market. Confirm the ordering suffix matches the tape and reel packaging format.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30V breakdown voltage is required. Consider the RDS(on) values at specific gate drive voltages to ensure adequate conduction losses in the application. Evaluate the thermal resistance and power dissipation capabilities relative to the expected operating temperature range. Verify that the gate charge and switching times align with the system's frequency and driver capabilities.
Part Context
The DMN3015LSD-13 belongs to the DMN3015 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. This series is engineered to minimize on-state resistance while maintaining fast switching speeds. The device utilizes an SO-8 case constructed from molded plastic with a tin finish over a copper leadframe. It is designed for surface mount technology (SMD/SMT) installation.
Replacement Considerations
Consult the manufacturer's documentation for officially confirmed substitute part numbers. Ensure any replacement maintains equivalent voltage, current, and thermal ratings.
