DMN3016LDN-7

$0.70

Description：MOSFET 2N-CH 30V 7.3A 8VDFN
Series：-

SKU:ca294accf973 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 7.3A 8VDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7.3A
Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1415pF @ 15V
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：V-DFN3030-8 (Type J)
Grade：-
Qualification：-

Download product information

DMN3016LDN-7

Overview

The DMN3016LDN-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3030-8 surface-mount package and operates with a drain-source voltage of 30V. The device provides a maximum continuous drain current of 7.3A at +25°C, reducing to 5.8A at +70°C. Static drain-source on-resistance is specified at a maximum of 20mΩ at VGS=10V and 24mΩ at VGS=4.5V. Total power dissipation reaches 1.1W at +25°C in steady state. Operating and storage temperature ranges span from -55°C to +150°C.

Feature Summary

Dual N-channel configuration integrated into a single compact V-DFN3030-8 package
Optimized for low on-state resistance while maintaining superior switching performance
Totally lead-free construction fully compliant with RoHS directives
Halogen and antimony free green device design

Applications

DC motor control systems
DC-AC inverters
High efficiency power management applications

Procurement Notes

Verify the specific ordering suffix when purchasing components. The DMN3016LDN-7 variant utilizes a 3000-piece tape and reel packaging format. Confirm that the received units match the exact part number and package type required for the intended circuit design to ensure proper electrical and mechanical integration.

Selection Notes

Select this component for designs requiring dual N-channel MOSFETs within a small footprint. Evaluate thermal constraints carefully as the junction-to-ambient thermal resistance is 119°C/W under standard FR-4 board conditions. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance across the operating temperature range.

Part Context

This component belongs to the DMN series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It shares functional similarities with other devices in the family but is distinguished by its specific 30V rating and V-DFN3030-8 packaging. The series targets high-efficiency power management solutions requiring compact dual-transistor configurations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications against alternative dual N-channel MOSFETs before implementation.