DMN3016LFDE-13

$0.27

Description：MOSFET N-CH 30V 10A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a7b0584775cf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 10A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：730mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMN3016LFDE-13

Overview

The DMN3016LFDE-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of ±20 V. The device offers a maximum on-resistance (RDS(ON)) of 12 mΩ at VGS = 10 V with a continuous drain current (ID) of 10 A, or 16 mΩ at VGS = 4.5 V with an ID of 8.5 A. Total gate charge (Qg) is 25.1 nC at VGS = 10 V. It operates within a junction temperature range of -55°C to +150°C and utilizes the U-DFN2020-6 package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features a low profile construction with a 0.6mm height and a compact PCB footprint of 4mm².
Utilizes a totally lead-free and fully RoHS compliant manufacturing process that is halogen and antimony free.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm compliance requirements such as RoHS 3 and REACH status against current regulatory standards before finalizing procurement specifications.

Selection Notes

Select this component when a low-profile surface-mount solution is required for 30V DC-DC conversion tasks. The U-DFN2020-6 package provides thermal efficiency suitable for space-constrained designs. Ensure the driving circuit can supply sufficient gate voltage to achieve the optimal 12 mΩ RDS(ON) threshold.

Part Context

This part belongs to the DMN3016 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for applications demanding low conduction losses and fast switching speeds within a minimal physical footprint. The device integrates a body diode for synchronous rectification or freewheeling operations.