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DMN3018SFG-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 8.5A PWRDI3333-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN3018SFG-13
- Description：MOSFET N-CH 30V 8.5A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：697 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for DMN3018SFG-13
Single FETs, MOSFETs Overview
The DMN3018SFG-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 30V and a gate-source voltage (VGSS) rating of ±25V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 16mΩ at VGS=10V and 21mΩ at VGS=4.5V. Continuous drain current reaches 30A at TC=+25°C and 8.5A at TA=+25°C. Total power dissipation is rated at 1.0W with a thermal resistance (RθJA) of 126°C/W. Input capacitance (CISS) is typically 697pF, and total gate charge (QG) is 13.2nC at VGS=10V.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
- Utilizes a small form factor PowerDI package that occupies only 33% of the board area compared to SO-8 packages.
- Features an ESD protected gate structure for enhanced reliability.
Single FETs, MOSFETs Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm compliance requirements such as RoHS and AEC-Q101 qualification status directly against the official datasheet specifications before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a low-profile surface-mount solution is required for 30V logic-level switching applications. The PowerDI3333-8 package provides significant board space savings compared to traditional SO-8 footprints. Ensure the application design accounts for the specified thermal resistance values to maintain junction temperatures within the -55°C to +150°C operating range.
Single FETs, MOSFETs Part Context
This part belongs to the DMN3018 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is distinct from P-channel variants like the DMP3018 family and other voltage ratings within the broader product line. The device is specifically engineered for compact power management designs requiring efficient heat dissipation in a minimal footprint.
Single FETs, MOSFETs Replacement Considerations
The DMN3018SFGQ is available as an automotive-compliant alternative under a separate datasheet. Verify pinout compatibility and electrical parameter equivalence when considering cross-references from other manufacturers.
Single FETs, MOSFETs FAQ
What is the board area advantage of the PowerDI package over SO-8?
The PowerDI case occupies just 33% of the board area occupied by an SO-8 package, enabling smaller end products.
Is this device qualified for automotive applications?
The standard DMN3018SFG is not explicitly stated as automotive-qualified; however, an automotive-compliant version is available under the part number DMN3018SFGQ.
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