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Product Detailed Parameters
- Description：MOSFET N-CH 30V 8.5A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：697 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3018SFGQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 surface-mount package with a drain-source voltage (Vdss) rating of 30V and a continuous drain current (Id) of 6.7A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 9.5mΩ at Vgs=10V and 13mΩ at Vgs=4.5V. Key electrical parameters include a gate charge (Qg) of 13.2nC, input capacitance (Ciss) of 697pF, and a power dissipation (Pd) of 1.5W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration providing two independent switching channels in a single compact package.
- Low on-resistance design optimized for efficient power handling and minimal conduction losses.
- Enhancement mode operation suitable for direct logic interface control applications.
Applications
- DC-DC converter synchronous rectification stages
- Load switching circuits for portable electronic devices
- Battery protection and management systems
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status as per manufacturer documentation. Confirm the PowerDI3333-8 footprint dimensions against PCB layout requirements. Ensure thermal management strategies account for the 1.5W power dissipation limit under expected operating conditions. Cross-reference ordering information with official Diodes Incorporated catalogs to avoid confusion with non-qualified variants.
Selection Notes
Select this component when a dual N-channel solution is required for space-constrained designs. The 30V rating suits low-voltage battery systems. Compare Rds(on) values against alternative packages to balance conduction loss versus thermal performance. Verify that the 13.2nC gate charge aligns with the driving circuit's capability for adequate switching speeds without excessive drive current demands.
Part Context
This part belongs to Diodes Incorporated's DMN series of dual MOSFETs. It utilizes the PowerDI3333-8 package, which offers improved thermal performance compared to standard SOIC-8 packages while maintaining a small footprint. The series is designed for high-efficiency power management applications requiring multiple switching elements.
Replacement Considerations
The DMN3018SFG-13 is a related variant but lacks the 'Q' suffix, indicating it may not hold AEC-Q101 automotive qualification. Verify if automotive grade certification is mandatory for the target application before substituting.
