DMN3020UFDFQ-7

$0.12

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:6fc5fb024a48 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.4A (Ta), 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：19mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 8 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1304 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：730mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMN3020UFDFQ-7

Overview

The DMN3020UFDFQ-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 15A at case temperature +25°C. The device offers a low on-state resistance of 19mΩ at VGS=4.5V and 25mΩ at VGS=2.5V. It utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile, providing a PCB footprint of 4mm². Total power dissipation reaches 2.03W at TA=+25°C with an exposed pad. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance while maintaining superior switching performance.
Features an integrated gate protection diode and ESD protected gate structure.
Qualified for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the component datasheet revision number matches the design requirements before procurement. Confirm that the ordering suffix corresponds to the required tape and reel quantity. Ensure the application environment meets the specified thermal and electrical ratings defined in the official documentation.

Selection Notes

Select this component when a low-profile N-channel MOSFET with automotive qualification is required. Consider the 30V breakdown voltage and 15A current capability relative to the load requirements. Evaluate the thermal resistance characteristics based on the intended PCB copper area and ambient operating conditions.

Part Context

This part belongs to the DMN3020 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is specifically engineered for compact designs requiring low on-resistance and fast switching speeds within a small U-DFN2020-6 package.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage, current, and package specifications.

FAQ

Is the DMN3020UFDFQ-7 suitable for automotive applications?

Yes, the DMN3020UFDFQ is suitable for automotive applications requiring specific change control. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.