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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7.6A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.6A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs：22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.7nC @ 4.5V, 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：481pF @ 15V, 996pF @ 15V
- Power - Max：1.96W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：PowerDI3333-8 (Type D)
- Grade：-
- Qualification：-
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Overview
The DMN3022LFG-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type D) package. It features a 30V drain-source voltage rating and operates within a -55°C to +150°C junction temperature range. The device integrates two channels with distinct on-resistance specifications: Q1 has a maximum RDS(ON) of 22mΩ at VGS=5V and ID=10A, while Q2 achieves a lower maximum of 8mΩ under identical conditions. Continuous drain current reaches 15A at TC=+25°C. Total gate charge is specified at 3.7nC for Q1 and 8nC for Q2.
Feature Summary
- Dual synchronous N-channel configuration designed for high-efficiency power management applications
- Optimized for minimized on-state resistance while maintaining superior switching performance
- Manufactured using lead-free, halogen-free, and antimony-free green materials
Applications
- DC-DC Converters
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix when sourcing components. The suffix '-13' indicates a standard tape and reel packaging format containing 3000 units per reel. Confirm that the required quantity aligns with this factory packaging specification to ensure proper handling and storage conditions are maintained upon receipt.
Selection Notes
Select this component for circuits requiring a 30V synchronous rectification solution. Choose Q2 for primary low-loss paths due to its 8mΩ on-resistance, or utilize Q1 where slightly higher resistance is acceptable. Ensure the driving circuit provides a minimum 5V gate drive to achieve the rated static drain-source on-resistance values effectively.
Part Context
This part belongs to the DMN3022 series of synchronous N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type D) surface-mount case design. The product line focuses on minimizing on-state resistance while maintaining fast switching speeds for modern power management systems.
Replacement Considerations
The datasheet lists the DMN3022LFG-7 as an alternative part number within the same family, differing only in the packaging quantity (1000 units per tape and reel). No other cross-model substitutes are documented in the provided source material.
