DMN3024LSD-13

$0.77

Description：MOSFET 2N-CH 30V 6.8A 8SO
Series：-

SKU:1d316098a0ac Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.8A
Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：608pF @ 15V
Power - Max：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMN3024LSD-13

Overview

The DMN3024LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30V and a gate-source voltage (VGS) rating of ±20V. The device provides a static drain-source on-resistance (RDS(on)) of 24mΩ at VGS=10V with a continuous drain current (ID) of 7.2A. At VGS=4.5V, the RDS(on) is 36mΩ with an ID of 5.8A. Total gate charge (Qg) is 12.9nC at VGS=10V. Power dissipation is 1.3W, with thermal resistance junction-to-ambient at 100°C/W. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a single SOIC-8 package for space-efficient circuit design
Low on-state resistance optimized for high efficiency power management applications
Fast switching speed characteristics suitable for dynamic load control

Applications

Motor control systems
Backlighting circuits
DC-DC converters
Power management functions

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet revision 3 alignment during procurement. Ensure storage conditions comply with J-STD-020D moisture sensitivity level 1 requirements before soldering. Validate RoHS compliance and halogen-free status as defined by the manufacturer's green policy specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Evaluate thermal derating curves for PCB layout constraints, noting that power dissipation decreases linearly above 25°C ambient temperature. Compare total gate charge values against driver capabilities to ensure adequate switching performance within the target frequency range.

Part Context

This part belongs to the DMN series of surface-mount MOSFETs designed for general-purpose switching. It utilizes a molded plastic case with matte tin terminals over a copper lead frame. The product marking code is N3024LD, followed by date code indicators. Packaging is provided in reels of 2,500 units with a tape width of 12mm.