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Product Detailed Parameters
- Description：MOSFET N-CH 30V 7.5A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：479 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3024SFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and a maximum continuous drain current of 7.5A at 25°C. The device offers a low on-state resistance of 23mΩ at VGS=10V and 33mΩ at VGS=4.5V. Packaged in the thermally efficient PowerDI3333-8 surface-mount format, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state losses
- Small form factor package occupies significantly less board area compared to traditional SO-8 packages
- Qualified to AEC-Q101 standards for automotive and high reliability requirements
- Compliant with RoHS directives and halogen-free manufacturing standards
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging quantity and reel specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm that the component meets all required environmental compliance standards for the intended deployment region before finalizing procurement orders.
Selection Notes
Select this component when space constraints require a compact footprint without sacrificing thermal performance. Evaluate the gate threshold voltage and total gate charge parameters to ensure compatibility with the driving circuitry logic levels. Consider the thermal resistance characteristics relative to the available copper pad layout on the printed circuit board.
Part Context
This part belongs to the DMN3024 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the proprietary PowerDI3333-8 package technology, which integrates a molded plastic case with a copper leadframe. The series is engineered to balance low conduction losses with fast switching speeds for modern electronic designs.
Replacement Considerations
Consult official substitution lists or datasheets for equivalent parts within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics before implementing any alternative components in existing designs.
