ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 9.9A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Download product information
Overview
The DMN3025LFDF-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30 V and a maximum on-resistance (R_DS(ON)) of 20.5 mΩ at V_GS = 10 V and I_D = 7 A, or 30 mΩ at V_GS = 4.5 V. The device supports a continuous drain current of 8.3 A at +25°C and up to 9.9 A for short durations. Packaged in a U-DFN2020-6 (Type F) case with a 0.6 mm profile, it offers low input capacitance and fast switching characteristics suitable for high-efficiency power management.
Feature Summary
- Low on-state resistance optimized for high-efficiency power management applications
- Ultra-low 0.6 mm profile designed specifically for space-constrained devices
- Fast switching speed combined with low input capacitance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- General purpose interfacing switch
- Power management functions
- High-efficiency power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required JEDEC standards for high reliability if applicable to the design. Ensure the U-DFN2020-6 footprint matches the PCB layout guidelines provided in the datasheet to maintain thermal performance.
Selection Notes
Select this component when a compact N-channel MOSFET with a 30 V rating is required. The U-DFN2020-6 package provides a small PCB footprint of 4 mm². Consider the R_DS(ON) values at both 4.5 V and 10 V gate drive voltages to ensure compatibility with the system's logic levels and efficiency targets.
Part Context
This part belongs to the DMN3025LFDF series from Diodes Incorporated. It utilizes a silicon-based enhancement mode technology housed in a molded plastic 'Green' molding compound case. The terminals are finished with NiPdAu over a copper leadframe, ensuring solderability per MIL-STD-208 standards.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. These alternatives are qualified to AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.
