DMN3025LFDF-7

DMN3025LFDF-7

$0.54
  • Description:MOSFET N-CH 30V 9.9A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c1d9765c6be1 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 9.9A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:9.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:20.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13.2 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:641 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:U-DFN2020-6 (Type F)
  • Package / Case:6-UDFN Exposed Pad

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DMN3025LFDF-7

Overview

The DMN3025LFDF-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 30 V and a maximum gate-source voltage (Vgs) of ±20 V. The device supports a continuous drain current (Id) of 8.3 A at steady state (+25°C) or 9.9 A for short durations (<10s). Its static drain-source on-resistance (Rds(on)) is specified as a maximum of 20.5 mΩ at Vgs = 10 V and Id = 7 A, and 30 mΩ at Vgs = 4.5 V. Total power dissipation reaches 2.1 W at +25°C with an exposed pad. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
  • Features a low profile construction with a 0.6mm case height suitable for space-constrained designs.
  • Utilizes a U-DFN2020-6 package footprint optimized for thermal management via an exposed copper pad.
  • Constructed with lead-free terminals and compliant with RoHS directives and halogen-free standards.

Applications

  • General purpose interfacing switch
  • Power management functions

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging quantity and reel specifications. Ensure that the procurement channel provides original manufacturer components to guarantee authenticity and adherence to quality standards. Confirm compliance requirements such as RoHS and REACH status match project specifications before finalizing orders.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for efficient power switching. Consider the 30V rating and 20.5mΩ Rds(on) for low-loss applications. Evaluate the U-DFN2020-6 package dimensions against PCB layout constraints. Verify thermal dissipation capabilities relative to the intended operating environment and heat sinking methods.

Part Context

This part belongs to the DMN3025LFDF series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose interfacing and power management tasks. The device utilizes silicon technology and is housed in a U-DFN2020-6 (Type F) package. It is qualified to JEDEC standards for high reliability.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Consult official substitution lists for electrically equivalent alternatives if this specific part number is unavailable.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) is rated at ±20 V.

Is this component suitable for high-reliability applications?

Yes, the part is qualified to JEDEC standards for high reliability.

DMN3025LFDF-7DMN3025LFDF-7
$0.54
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