DMN3025LSS-13

$0.44

Description：MOSFET N CH 30V 7.2A 8-SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7bf04896f37e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N CH 30V 7.2A 8-SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN3025LSS-13

Overview

The DMN3025LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 7.2A at 25°C. The device offers a maximum on-resistance of 20mΩ at VGS=10V and 31mΩ at VGS=4.5V. Packaged in an SO-8 case, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Qualified to AEC-Q101 standards for high reliability.
Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance requirements relevant to the target market. Ensure the selected part number aligns with the intended thermal and electrical operating conditions specified in the official datasheet.

Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for efficient power switching. Consider the SO-8 package dimensions and thermal characteristics for PCB layout. Evaluate the gate threshold voltage and total gate charge against the driving circuit capabilities to ensure optimal switching performance.

Part Context

This component belongs to the DMN3025LSS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for applications requiring minimized on-state resistance combined with fast switching speeds. The product line targets high-efficiency power management solutions across various electronic systems.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference key parameters such as voltage ratings, current capacity, and package type before implementation.