DMN3026LVTQ-13

$0.12

Description：MOSFET N-CH 30V 6.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b6c3037cf073 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 6.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：643 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN3026LVTQ-13

Overview

The DMN3026LVTQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a continuous drain current of 6.6A at +25°C. The device offers a maximum on-resistance of 23mΩ at VGS=10V and 30mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.2W at +25°C. The component is housed in a TSOT26 package.

Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Qualified to AEC-Q101 standards for high reliability and capable of PPAP requirements.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Halogen and antimony free, classified as a green device.

Applications

DC-DC Converters
Power management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the requested part matches the exact manufacturer designation and document revision to ensure compatibility with design specifications. Cross-reference electrical parameters against the latest official datasheet before finalizing procurement decisions.

Selection Notes

Select this component for circuits requiring low input capacitance and fast switching speeds. The low on-resistance supports efficient power handling in compact designs. Ensure gate drive voltages align with the specified threshold characteristics for optimal performance. Consider thermal management requirements based on the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the DMN3026LVT series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in a TSOT26 case. The device is designed to minimize on-state resistance while maintaining switching performance, making it suitable for modern power management solutions.

Replacement Considerations

The DMN3026LVTQ-7 is an electrically identical alternative available in a 3,000-unit tape and reel packaging format. Both parts share the same TSOT26 case and electrical characteristics. Verify package compatibility and sourcing availability when considering substitution between these two variants.