DMN3029LFG-13

$0.14

Description：MOSFET N-CH 30V 5.3A PWRDI333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2cb4bfa6242a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.3A PWRDI333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：580 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3029LFG-13

Overview

The DMN3029LFG-13 is a single-channel N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGSS) rating of ±25 V. The device provides a continuous drain current (ID) of 8.0 A at TA = +25°C, with a maximum static drain-source on-resistance (RDS(on)) of 18.6 mΩ at VGS = 10 V and 26.5 mΩ at VGS = 4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area occupied by SO-8 packages.
Rated for 100% Unclamped Inductive Switching (UIS) avalanche capability and 100% Rg testing.
Qualified to AEC-Q101 standards for high reliability automotive applications.

Applications

Backlighting
DC-DC Converters
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance and halogen-free requirements if specified for the target assembly process. Ensure the PowerDI3333-8 footprint matches the suggested pad layout provided in the datasheet application notes.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The device offers a balance of thermal efficiency and electrical performance suitable for driving loads in portable electronics. Consider the 30 V breakdown voltage and 8.0 A continuous current limits to ensure adequate headroom for the intended circuit operation under varying thermal conditions.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the POWERDI3333-8 surface-mount package, which is designed for high thermal conductivity and small board footprint. The series targets applications requiring robust switching capabilities and low conduction losses in modern electronic systems.

Replacement Considerations

Consult official substitution lists or cross-reference tools provided by Diodes Incorporated for verified alternatives. Ensure any replacement maintains compatibility with the PowerDI3333-8 package dimensions and meets or exceeds the original electrical specifications for voltage, current, and thermal resistance.